SOP8501 no.8007-1/5 features ? high breakdown voltage. (v ceo 3 400v) ? excellent h fe linearlity. specifications absolute maximum ratings at ta=25 c parameter symbol conditions pnp npn unit collector-to-base voltage v cbo --400 400 v collector-to-emitter voltage v ceo --400 400 v emitter-to-base voltage v ebo -- 5 5 v collector current i c --1 0.2 a collector current (pulse) i cp --2 0.4 a collector dissipation p c mounted on a ceramic board (2000mm 2 5 0.8mm) 1unit 1.3 w p t mounted on a ceramic board (2000mm 2 5 0.8mm) 1unit 1.6 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [pnp] collector cutoff current i cbo v cb =--300v, i e =0 --1.0 m a emitter cutoff current i ebo v eb =--4v, i c =0 --1.0 m a dc current gain h fe v ce =--10v, i c =--100ma 40 200 gain-bandwidth product f t v ce =--10v, i c =--50ma 50 mhz collector-to-emitter saturation voltage v ce (sat) i c =--200ma, i b =--20ma --1.0 v base-to-emitter saturation voltage v be (sat) i c =--200ma, i b =--20ma --1.0 v collector-to-base breakdown voltage v (br)cbo i c =--10 m a, i e =0 --400 v collector-to-emitter breakdown voltage v (br)ceo i c =--1ma, r be = --400 v emitter-to-base breakdown voltage v (br)ebo i e =--10 m a, i c =0 --5 v output capacitance cob v cb =--30v, f=1mhz 12 pf turn-on time ton see specified test circuit. 0.25 m s storage time t stg see specified test circuit. 3.0 m s fall time t f see specified test circuit 0.3 m s continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn8007 d2004cb ts im tb-00000396 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. SOP8501 pnp epitaxial planar silicon transistor npn triple diffused planar silicon transistor high-voltage driver applications
SOP8501 no.8007-2/5 continued from preceding page. ratings parameter symbol conditions min typ max unit [npn] collector cutoff current i cbo v cb =300v, i e =0 1.0 m a emitter cutoff current i ebo v eb =4v, i c =0 1.0 m a dc current gain h fe v ce =10v, i c =50ma 60 200 gain-bandwidth product f t v ce =30v, i c =10ma 70 mhz collector-to-emitter saturation voltage v ce (sat) i c =50ma, i b =5ma 0.6 v base-to-emitter saturation voltage v be (sat) i c =50ma, i b =5ma 1.0 v collector-to-base breakdown voltage v (br)cbo i c =10 m a, i e =0 400 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma, r be = 400 v emitter-to-base breakdown voltage v (br)ebo i e =10 m a, i c =0 5 v output capacitance cob v cb =30v, f=1mhz 4 pf reverse transfer capacitance cre v cb =30v, f=1mhz 3 pf turn-on time ton see specified test circuit. 0.25 m s turn-off time t off see specified test circuit. 5.0 m s package dimensions electrical connection unit : mm 2233 switching time test circuit [pnp] [npn] 87 65 12 34 1 : emitter1 2 : base1 3 : emitter2 4 : base2 5 : collector2 6 : collector2 7 : collector1 8 : collector1 top view 1 : emitter1 2 : base1 3 : emitter2 4 : base2 5 : collector2 6 : collector2 7 : collector1 8 : collector1 sanyo : sop8 14 5 8 4.4 0.3 6.0 0.2 5.0 0.595 1.27 1.5 0.1 1.8max 0.43 v r r l v cc = --150v v be =5v 10i b1 = --10i b2 =i c = --200ma i c =200m r l =750 w , r b =50 w ++ input output r b 100 m f 470 m f pw=20 m s i b1 d.c. 1% i b2 50 w v r r l v cc =150v v be = --1v 10i b1 = --10i b2 =i c =50ma i c =50m r l =3k w , r b =200 w + + input output r b 100 m f 470 m f pw=20 m s i b1 d.c. 1% i b2 50 w
SOP8501 no.8007-3/5 v ce = --10v ta=75 c --25 c --1.0 --0.8 --0.6 --0.2 --0.4 0 0 --0.2 --0.4 --0.6 --0.8 --1.4 --1.2 --1.0 i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a itr04587 [pnp] 25 c 20 0 0 0.2 0.4 0.6 1.2 1.0 0.8 1.4 i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- ma itr04446 120 40 60 80 100 v ce =10v ta=70 c 25 c --30 c [npn] --10 --100 23 5 35 2357 7 7 --1000 --1.0 7 5 3 3 2 2 7 5 --0.1 ta= --25 c 25 c 75 c v ce (sat) -- i c collector current, i c -- ma itr04597 i c / i b =10 v be (sat) -- i c collector current, i c -- ma --1.0 --0.1 --10 --100 --1000 ta= --25 c 75 c 3 2 3 2 7 5 7 5 3 5 23 57 23 57 723 i c / i b =10 itr04599 25 c [pnp] [pnp] [npn] [npn] itr04452 v ce (sat) -- i c collector current, i c -- ma 7 5 2 3 2 7 5 5 3 1.0 0.1 2 735 2 72357 1.0 10 100 itr04450 i c / i b =10 ta=70 c 25 c, --30 c v be (sat) -- i c collector current, i c -- ma 3 5 5 3 2 7 7 1.0 2 735 3 72 2 357 1.0 10 100 i c / i b =10 70 c 25 c ta= --30 c ta=75 c --25 c h fe -- i c collector current, i c -- ma dc current gain, h fe v ce = --10v itr04589 100 7 7 5 3 5 3 2 3 2 10 7 7 7 5 --1000 --10 3 3253 23 2 5 --100 [pnp] 25 c 5 100 10 7 5 7 3 2 3 2 5 1.0 10 100 h fe -- i c collector current, i c -- ma dc current gain, h fe itr04448 ta=70 c 25 c --30 c 23 57 77 23 3 52 v ce =10v [npn] collector-to-emitter saturation voltage, v ce (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- v
SOP8501 no.8007-4/5 v ce = --10v f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- ma 3 100 10 2 7 5 7 5 3 2 7 5 32 2 5 35 3 --10 7 --100 itr04591 [pnp] [npn] switching time, sw time -- m s 5 0.1 1.0 7 10 2 3 5 7 3 7 2 5 27 3 57 2 5 3 5 10 100 3 sw time -- i c collector current, i c -- ma itr04454 t on t f t stg v cc = --150v 10i b1 = --10i b2 =i c 2 2323 57 --10 35 5 7 --100 7 --1000 sw time -- i c switching time, sw time -- m s collector current, i c -- ma 2 3 7 7 5 2 3 5 10 7 1.0 0.1 itr04595 v cc = --150v 10i b1 = --10i b2 =i c t stg t on t f [pnp] [npn] [pnp] cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v 3 2 3 2 7 5 7 5 3 10 100 --1.0 37 73 2 --10 22 7 --100 55 itr04593 f=1mhz [pnp] [pnp / npn] total dissipation, p t -- w p t -- ta ambient temperature, ta -- c [pnp / npn] collector dissipation, p c -- w p c -- ta ambient temperature, ta -- c collector-to-emitter voltage, v ce -- v collector current, i c -- a a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a a s o 0 1.8 020 60 40 80 120 100 160 140 it07328 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 3 -- 1.0 -- 0.1 -- 0.01 7 5 3 2 7 5 2 7 5 3 2 3 2 7 -- 0.1 -- 1.0 -- 10 23 5 7 23 5 7 -- 100 23 5 7 23 5 0 20 40 60 80 100 120 140 160 0.6 0.4 0.2 0 1.2 1.0 0.8 1.3 1.4 1.6 -- 0.001 dc operation i cp = --2a i c = --1a 500 m s it07327 it07325 10ms 1ms 100ms 3 0.1 0.01 7 5 3 2 7 5 2 7 5 3 2 7 0.1 1.0 10 23 5 7 23 5 7 100 23 5 7 23 5 0.001 dc operation i cp =0.4a i c =0.2a 500 m s it07326 10ms 1ms 100ms tc=25 c single pulse mounted on a ceramic board (2000mm 2 5 0.8mm) 1unit tc=25 c single pulse mounted on a ceramic board (2000mm 2 5 0.8mm) 1unit mounted on a ceramic board (2000mm 2 5 0.8mm) 1unit mounted on a ceramic board (2000mm 2 5 0.8mm) 1unit
SOP8501 no.8007-5/5 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of december, 2004. specifications and information herein are subject to change without notice. ps
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